收藏本站
AR
C
HIVE INF
O
RMATI
O
N
A
RCHIVE INFORMATION
MRF18030ALR3 MRF18030ALSR3
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for GSM and EDGE base station applications with frequencies
from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier
amplifier applications. Specified for GSM 1805--1880 MHz.
?
Typical GSM Performance:
Power Gain -- 14 dB (Typ) @ 30 Watts
Efficiency -- 50% (Typ) @ 30 Watts
?
Capable of Handling 5:1 VSWR, @ 26 Vdc, 30 Watts CW Output Power
Features
?
Internally Matched for Ease of Use
?
High Gain, High Efficiency and High Linearity
?
Integrated ESD Protection
?
Designed for Maximum Gain and Insertion Phase Flatness
?
Low Gold Plating Thickness on Leads, 40μ″
Nominal.
?
RoHS Compliant
?
in Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
VDSS
--0.5, +65
Vdc
Gate--Source Voltage
VGS
--0.5, +15
Vdc
Total Device Dissipation @ TC
=25°C
Derate above 25°C
PD
83.3
0.48
W
W/°C
Storage Temperature Range
Tstg
-- 65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature
TJ
200
°C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
RθJC
2.1
°C/W
Table 3. ESD Protection Characteristics
Test Conditions
Class
Human Body Model
2 (Minimum)
Machine Model
M3 (Minimum)
Document Number: MRF18030A
Rev. 8, 5/2006
Freescale Semiconductor
Technical Data
MRF18030ALR3
MRF18030ALSR3
1800--1880 MHz, 30 W, 26 V
GSM/GSM EDGE
LATERAL N--CHANNEL
RF POWER MOSFETs
CASE 465E--04, STYLE 1
NI--400
MRF18030ALR3
CASE 465F--04, STYLE 1
NI--400S
MRF18030ALSR3
?
Freescale Semiconductor, Inc., 2006, 2010.
All rights reserved.
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
MRF18060ALR3 IC MOSFET RF N-CHAN NI-780
MRF18085ALSR5 IC MOSFET RF N-CHAN NI-780S
MRF18090AR3 IC MOSFET RF N-CHAN NI-880
MRF19030LSR5 IC MOSFET RF N-CHAN NI-400S
MRF19045LR3 IC MOSFET RF N-CHAN NI-400
MRF19085LR3 IC MOSFET RF N-CHAN NI-780
MRF19090SR3 IC MOSFET RF N-CHAN NI-880S
MRF19125R5 IC MOSFET RF N-CHAN NI-880
相关代理商/技术参数
MRF18030ALSR5 功能描述:IC MOSFET RF N-CHAN NI-400S RoHS:是 类别:分离式半导体产品 >> RF FET 系列:- 产品目录绘图:MOSFET SOT-23-3 Pkg 标准包装:3,000 系列:- 晶体管类型:N 通道 JFET 频率:- 增益:- 电压 - 测试:- 额定电流:30mA 噪音数据:- 电流 - 测试:- 功率 - 输出:- 电压 - 额定:25V 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:带卷 (TR) 产品目录页面:1558 (CN2011-ZH PDF) 其它名称:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR
MRF18030BLR3 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF18030BLSR3 制造商:Rochester Electronics LLC 功能描述: 制造商:Freescale Semiconductor 功能描述:
MRF18030BR3 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:THE RF MOSFET LINE RF POWER FIELD EFFECT TRANSISTORS N - CHANNEL ENHANCEMENT - MODE LATERAL MOSFETS
MRF18030BSR3 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:THE RF MOSFET LINE RF POWER FIELD EFFECT TRANSISTORS N - CHANNEL ENHANCEMENT - MODE LATERAL MOSFETS
MRF1803BR3 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:THE RF MOSFET LINE RF POWER FIELD EFFECT TRANSISTORS N - CHANNEL ENHANCEMENT - MODE LATERAL MOSFETS
MRF1803BSR3 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:THE RF MOSFET LINE RF POWER FIELD EFFECT TRANSISTORS N - CHANNEL ENHANCEMENT - MODE LATERAL MOSFETS
MRF18060A 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors